CEM6426
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4.7A, RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85m...
CEM6426
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
60V, 4.7A, RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 4.7 IDM 18.8
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 50
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 3. 2010.July http://www.cet-mos.com
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c
Symbol
Test Condition
BVDSS IDSS IGSSF IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA VGS = 10V, ID = 4.5A VGS = 4.5V, ID = 3.9A
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Character...