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TC58BVG0S3HTAI0 Dataheets PDF



Part Number TC58BVG0S3HTAI0
Manufacturers Toshiba
Logo Toshiba
Description 1 GBIT (128M x 8-BIT) CMOS NAND E2PROM
Datasheet TC58BVG0S3HTAI0 DatasheetTC58BVG0S3HTAI0 Datasheet (PDF)

TC58BVG0S3HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG0S3HTAI0 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase .

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