N-CHANNEL MOSFET
STW60NM50N
N-channel 500 V, 0.035 Ω, 68 A, MDmesh™ II Power MOSFET in a TO-247 package
Datasheet - production data
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Description
STW60NM50N
N-channel 500 V, 0.035 Ω, 68 A, MDmesh™ II Power MOSFET in a TO-247 package
Datasheet - production data
Features
3 2 1
TO-247
Order code VDSS (@Tjmax) RDS(on) max ID
STW60NM50N
550 V
<0.043 Ω 68 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications
Switching applications
Figure 1. Internal schematic diagram
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Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Order codes STW60NM50N
Table 1. Device summary
Marking
Packages
60NM50N
TO-247
Packaging Tube
April 2013
This is information on a product in full production.
DocID023157 Rev 2
1/13
www.st.com
13
Contents
Contents
STW60NM50N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . ....
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