Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
Symbol
VCC VIN IC PD Tj Tstg
Limits
−50 −10 to +5
−500 200 150 −55 to +150
Unit
V V mA mW C C
LDTB113ZLT1G S-LDTB113ZLT1G
3 1
2
SOT-23
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB113ZLT1G S-LDTB113ZLT1G
LDTB113ZLT3G S-LDTB113ZLT3G
K8 K8
1 10 3000/Tape & Reel 1 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
VI(off) VI(on)
− −3
Output voltage
VO(on)
−
Input current
II −
Output current
IO(off)
−
DC current gain
GI 56
Input resistance
R1 0.7
Resistance ratio
R2/R1
8
Transition frequency
fT
∗ Transition frequency of the device
−
Typ. − − − − − − 1 10
200
Max. −0.3
− −0.3 −7.2 −0.5
− 1.3 12 −
Unit
V
V mA µA − kΩ − MHz
Conditions VCC= −5V, IO= −100µA VO= −0.3V, IO= −20mA IO/II= −50mA/−2.5mA VI= −5V VCC= −50V, VI=0V VO= − 5V, IO= −50mA
− − VCE= −10V, IE=50mA, f=100MHz ∗
Rev.O 1/3
LESHAN RADIO COMPANY, LTD. LDTB113ZLT1G;S-LDTB113ZLT1G
zElectrical characteristic curves
INPUT VOLTAGE : VI (on) (V)
-100 VO= −0.3V -50
-20 -10 -5
-2 -1 -500m
Ta= −40 C 25 C
100 C
-200m
-100m -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
OUTPUT CURRENT : Io (A)
-10m -5m
-2m -1m -500µ -200µ -100µ -50µ -20µ -10µ -5µ -2µ -1µ
0
Fig.2
VCC= −5V
Ta=100 C 25 C
−40 C
-0.5 -1.0 -1.5 -2.0 -2.5 -3.0
INPUT VOLTAGE : VI (off) (V)
Output current vs. input voltage (OFF characteristics)
DC CURRENT GAIN : GI
1k
500
200 Ta=100 C 25 C
100 −40 C
50
VO= −5V
20 10 5
2
1 -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output current
OUTPUT VOLTAGE : VO (on) (V)
-1 -500m
-200m -100m -50m
Ta=100 C 25 C
−40 C
lO/lI=20
-20m -10m -5m
-2m
-1m -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD. LDTB113ZLT1G;S-LDTB113ZLT1G
A L
3 BS
12
VG
C
D
H K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037 0.95
0.035 0.9
0.037 0.95
0.079 2.0
0.031 0.8
inches mm
Rev.O 3/3
.