Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits 50 50 5 500 200 150
−55 to +150
Unit V V V mA
mW C C
LDTD114GLT1G S-LDTD114GLT1G
3 1
2
SOT-23
1 BASE R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD114GLT1G S-LDTD114GLT1G
LDTD114GLT3G S-LDTD114GLT3G
E7 E7
_ 10 3000/Tape & Reel _ 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency
∗ Characteristics of built-in transistor.
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE R2
fT ∗
Min.
50 50 5 − 300 − 56 7 −
Typ.
− − − −
− − − 10 200
Max. − − −
0.5 580 0.3 − 13 −
Unit
V V V µA µA V − kΩ MHz
Conditions
IC=50µA IC=1mA IE=720µA VCB=50V VEB=4V IC/IB=50mA / 2.5mA IC=50mA , VCE=5V
− VCE=10V , IE= −50mA , f =100MHz
Rev.O 1/3
LESHAN RADIO COMPANY, LTD. LDTD114GLT1G;S-LDTD114GLT1G
DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
zElectrical characteristic curves
1000 Ta=25°C
500 VCE=5V
200 100 50
20 10 5
Ta=25°C
Ta=100°C Ta= −40°C
2
1 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
COLLECTOR CURRENT : IC (C)
Fig.1 DC current transfer ratio vs. Collector current
1 Ta=25°C
500m IC/IB=20
200m 100m 50m
Ta=100°C Ta=25°C
20m Ta= −40°C
10m
5m
2m
1m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage vs. Collector current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD. LDTD114GLT1G;S-LDTD114GLT1G
A L
3 BS
12
VG
C
D
H K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037 0.95
0.035 0.9
0.037 0.95
0.079 2.0
0.031 0.8
inches mm
Rev.O 3/3
.