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LDTD114GLT3G Dataheets PDF



Part Number LDTD114GLT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistor
Datasheet LDTD114GLT3G DatasheetLDTD114GLT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely elimi.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 50 50 5 500 200 150 −55 to +150 Unit V V V mA mW C C LDTD114GLT1G S-LDTD114GLT1G 3 1 2 SOT-23 1 BASE R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTD114GLT1G S-LDTD114GLT1G LDTD114GLT3G S-LDTD114GLT3G E7 E7 _ 10 3000/Tape & Reel _ 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency ∗ Characteristics of built-in transistor. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R2 fT ∗ Min. 50 50 5 − 300 − 56 7 − Typ. − − − − − − − 10 200 Max. − − − 0.5 580 0.3 − 13 − Unit V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=720µA VCB=50V VEB=4V IC/IB=50mA / 2.5mA IC=50mA , VCE=5V − VCE=10V , IE= −50mA , f =100MHz Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDTD114GLT1G;S-LDTD114GLT1G DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) zElectrical characteristic curves 1000 Ta=25°C 500 VCE=5V 200 100 50 20 10 5 Ta=25°C Ta=100°C Ta= −40°C 2 1 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m COLLECTOR CURRENT : IC (C) Fig.1 DC current transfer ratio vs. Collector current 1 Ta=25°C 500m IC/IB=20 200m 100m 50m Ta=100°C Ta=25°C 20m Ta= −40°C 10m 5m 2m 1m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDTD114GLT1G;S-LDTD114GLT1G A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 J L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 0.037 0.95 0.035 0.9 0.037 0.95 0.079 2.0 0.031 0.8 inches mm Rev.O 3/3 .


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