Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
Symbol
VCC VIN IC Pd Tj Tstg
Limits
50 −10 to +12
500 200 150 −55 to +150
Unit
V V mA mW C C
LDTD123ELT1G
3 1
2
SOT-23
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD123ELT1G
F22
2.2 2.2 3000/Tape & Reel
LDTD123ELT3G
F22
2.2 2.2 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗Characteristics of built-in transistor.
Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗
Min. − 3 − − − 39
1.54 0.8 −
Typ. − − 0.1 − − − 2.2 1
200
Max. 0.5 − 0.3 3.8 0.5 − 2.86 1.2 −
Unit
V
V mA µA − kΩ − MHz
Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA IO/II=50mA/2.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=50mA
− − VCE=10V, IE= −50mA, f=100MHz
1/3
LESHAN RADIO COMPANY, LTD. LDTD123ELT1G
INPUT VOLTAGE : VI(on) (V)
zElectrical characteristic curves
100
VO=0.3V
50
20 10
5
2 1 500m
Ta= −40 C 25 C
100 C
200m
100m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
OUTPUT CURRENT : Io (A)
10m
5m
Ta=100 C 2m 25 C 1m −40 C
500µ
VCC=5V
200µ 100µ
50µ
20µ 10µ
5µ
2µ 1µ
0 0.5 1.0 1.5 2.0 2.5 3.0
INPUT VOLTAGE : VI(off) (V)
Fig.2 Output current vs. input voltage (OFF characteristics)
DC CURRENT GAIN : GI
1k
VO=5V
500
Ta=100 C 200 25 C 100 −40 C
50
20
10
5
2 1 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output current
OUTPUT VOLTAGE : VO(on) (V)
1 500m
200m 100m
50m
Ta=100 C 25 C
−40 C
lO/lI=20
20m 10m
5m
2m
1m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
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LESHAN RADIO COMPANY, LTD. LDTD123ELT1G
A L
3 BS
12
VG
C
D
H K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037 0.95
0.035 0.9
0.037 0.95
0.079 2.0
0.031 0.8
inches mm
3/3
.