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LDTD123ELT1G Dataheets PDF



Part Number LDTD123ELT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistor
Datasheet LDTD123ELT1G DatasheetLDTD123ELT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely elimi.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IC Pd Tj Tstg Limits 50 −10 to +12 500 200 150 −55 to +150 Unit V V mA mW C C LDTD123ELT1G 3 1 2 SOT-23 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTD123ELT1G F22 2.2 2.2 3000/Tape & Reel LDTD123ELT3G F22 2.2 2.2 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗Characteristics of built-in transistor. Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗ Min. − 3 − − − 39 1.54 0.8 − Typ. − − 0.1 − − − 2.2 1 200 Max. 0.5 − 0.3 3.8 0.5 − 2.86 1.2 − Unit V V mA µA − kΩ − MHz Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA IO/II=50mA/2.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=50mA − − VCE=10V, IE= −50mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. LDTD123ELT1G INPUT VOLTAGE : VI(on) (V) zElectrical characteristic curves 100 VO=0.3V 50 20 10 5 2 1 500m Ta= −40 C 25 C 100 C 200m 100m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : Io (A) 10m 5m Ta=100 C 2m 25 C 1m −40 C 500µ VCC=5V 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) DC CURRENT GAIN : GI 1k VO=5V 500 Ta=100 C 200 25 C 100 −40 C 50 20 10 5 2 1 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current OUTPUT VOLTAGE : VO(on) (V) 1 500m 200m 100m 50m Ta=100 C 25 C −40 C lO/lI=20 20m 10m 5m 2m 1m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/3 LESHAN RADIO COMPANY, LTD. LDTD123ELT1G A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 J L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 0.037 0.95 0.035 0.9 0.037 0.95 0.079 2.0 0.031 0.8 inches mm 3/3 .


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