NGB8206N, NGB8206AN
Ignition IGBT
20 A, 350 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGB...
NGB8206N, NGB8206AN
Ignition IGBT
20 A, 350 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar
Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
Ideal for Coil−on−Plug and Driver−on−Coil Applications Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage High Pulsed Current Capability
These are Pb−Free Devices
Applications
Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed
VCES VCER VGE
IC
390 390 $15 20 50
V V V ADC AAC
Continuous Gate Current Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) ESD (Charged−Device Model)
IG IG ESD
1.0 mA 20 mA 2.0 kV
ESD (Human Body Model) R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
Total Power Dissipation Derate above 25°C
@
TC
=
25°C
PD
150 W 1.0 W/°C
Operating & Storage Temperature Range
TJ, Tstg
−55 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maxim...