NGB8207BNT4G

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for Coil−on−Plug and Driver−on−Coil Applications Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Minimum Avalanche Energy − 500 mJ Gate Resistor (RG) = 70 W These are Pb−Free Devices Applications Ignition Systems MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed Continuous Gate Current Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) ESD (Charged−Device Model) VCES VGE IC IG IG ESD 365 $15 20 50 1.0 20 2.0 V V AADACC mA mA kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD kV 8.0 ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V Total Power Dissipation @ TC = 25°C Derate above 25°C (Note 1) PD 165 W 1.1 W/°C Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C Stresses exceeding Maximum Ratings ...