Document
NGD8201N, NGD8201AN
Ignition IGBT
20 A, 400 V, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications • DPAK Package Offers Smaller Footprint for Increased Board Space • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection • Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage • High Pulsed Current Capability • These are Pb−Free Devices
Applications
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed
VCES VCER VGE
IC
440 440 "15 20 50
V V V ADC AAC
Continuous Gate Current Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
IG 1.0 mA IG
20 mA
ESD (Charged−Device Model)
ESD
2.0 kV
ESD (Human Body Model) R = 1500 W, C = 100 pF
ESD
8.0 kV
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD 125 W 0.83 W/°C
Operating & Storage Temperature Range
TJ, Tstg −55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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20 A, 400 V VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V
C
G RG RGE
E
1
DPAK CASE 369C
STYLE 7
MARKING DIAGRAM
1 G
C
E
YWW NGD 8201xG
C
Y WW NGD8201x x G
= Year = Work Week = Device Code = N or A = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NGD8201NT4G
DPAK 2500 / Tape & Reel
(Pb−Free)
NGD8201ANT4G DPAK 2500 / Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 11
1
Publication Order Number: NGD8201N/D
NGD8201N, NGD8201AN
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C
Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS EAS(R)
250 200 180 2000
mJ mJ
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
RqJC
1.2 °C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
95 °C/W
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)
TL 275 °C
1. When surface mounted to an FR4 board using the minimum recommended pad size (76x76x1.6mm board size, 60 sqmm 1 oz. Copper). 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BVCES
Zero Gate Voltage Collector Current ICES
Test Conditions
IC = 2.0 mA IC = 10 mA VGE = 0 V, VCE = 15 V
VCE = 200 V, VGE = 0 V
Reverse Collector−Emitter Clamp Voltage
BVCES(R)
IC = −75 mA
Reverse Collector−Emitter Leakage Current
ICES(R)
VCE = −24 V − NGD8201N
VCE = −24 V − NGD8201AN
Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current Gate Resistor Gate−Emitter Resistor ON CHARACTERISTICS (Note 3) Gate Threshold Voltage
BVGES IGES RG RGE
IG = "5.0 mA VGE = "5.0 V
VGE(th)
IC = 1.0 mA, VGE = VCE
Threshold Temperature Coefficient (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
Min Typ
TJ = −40°C to 175°C TJ = −40°C to 175°C
TJ = 25°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = −40°C to 175°C
370 390
0.5 1.0 0.4 30 35 30 0.05 1.0 0.005 0.05 1.0 0.005 12 200
14.25
395 415 0.1 1.5 25 0.8 35 39 33 0.1 5.0 0.01 0.2 8.5 0.025 12.5 300 70 16
TJ = 25°C TJ = 175°C TJ = −40°C
1.5 1.8 0.7 1.0 1.7 2.0 4.0 4.6
Max
420 440 1.0 10 100* 5.0 39 45* 37 1.0 10 0.1 1.0 25 0.2 14 350*
25
2.1 1.3 2.3* 5.2
Unit V mA mA
V
mA
V mA W kW V
mV/°C
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NGD8201N, NGD8201AN
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
ON CHARACTERIS.