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NGD8201NT4G Dataheets PDF



Part Number NGD8201NT4G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Ignition IGBT
Datasheet NGD8201NT4G DatasheetNGD8201NT4G Datasheet (PDF)

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • DPAK Package Offers Smaller Footprint for Increased Board Spac.

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NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • DPAK Package Offers Smaller Footprint for Increased Board Space • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • These are Pb−Free Devices Applications • Ignition Systems MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed VCES VCER VGE IC 440 440 "15 20 50 V V V ADC AAC Continuous Gate Current Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) IG 1.0 mA IG 20 mA ESD (Charged−Device Model) ESD 2.0 kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD 8.0 kV ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V Total Power Dissipation @ TC = 25°C Derate above 25°C PD 125 W 0.83 W/°C Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 20 A, 400 V VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V C G RG RGE E 1 DPAK CASE 369C STYLE 7 MARKING DIAGRAM 1 G C E YWW NGD 8201xG C Y WW NGD8201x x G = Year = Work Week = Device Code = N or A = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NGD8201NT4G DPAK 2500 / Tape & Reel (Pb−Free) NGD8201ANT4G DPAK 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 11 1 Publication Order Number: NGD8201N/D NGD8201N, NGD8201AN UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Symbol Value Unit Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS EAS(R) 250 200 180 2000 mJ mJ THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RqJC 1.2 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 95 °C/W Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) TL 275 °C 1. When surface mounted to an FR4 board using the minimum recommended pad size (76x76x1.6mm board size, 60 sqmm 1 oz. Copper). 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol OFF CHARACTERISTICS Collector−Emitter Clamp Voltage BVCES Zero Gate Voltage Collector Current ICES Test Conditions IC = 2.0 mA IC = 10 mA VGE = 0 V, VCE = 15 V VCE = 200 V, VGE = 0 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA Reverse Collector−Emitter Leakage Current ICES(R) VCE = −24 V − NGD8201N VCE = −24 V − NGD8201AN Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current Gate Resistor Gate−Emitter Resistor ON CHARACTERISTICS (Note 3) Gate Threshold Voltage BVGES IGES RG RGE IG = "5.0 mA VGE = "5.0 V VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. Temperature Min Typ TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = 25°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = −40°C to 175°C 370 390 0.5 1.0 0.4 30 35 30 0.05 1.0 0.005 0.05 1.0 0.005 12 200 14.25 395 415 0.1 1.5 25 0.8 35 39 33 0.1 5.0 0.01 0.2 8.5 0.025 12.5 300 70 16 TJ = 25°C TJ = 175°C TJ = −40°C 1.5 1.8 0.7 1.0 1.7 2.0 4.0 4.6 Max 420 440 1.0 10 100* 5.0 39 45* 37 1.0 10 0.1 1.0 25 0.2 14 350* 25 2.1 1.3 2.3* 5.2 Unit V mA mA V mA V mA W kW V mV/°C http://onsemi.com 2 NGD8201N, NGD8201AN ELECTRICAL CHARACTERISTICS Characteristic Symbol ON CHARACTERIS.


NGD8201AN NGD8201NT4G NGD8201ANT4G


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