JCS1N60

N R N-CHANNEL MOSFET JCS1N60 MAIN CHARACTERISTICS ID 1.3 A VDSS 600 V Rdson（Vgs=10V） 8.5 Ω Qg 9.1 nC Package z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 4.9pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 4.9pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS1N60V-O-V-N-B JCS1N60V JCS1N60R-O-R-N-B JCS1N60R JCS1N60S-O-S-N-B JCS1N60S JCS1N60B-O-B-N-B JCS1N60B JCS1N60C-O-C-N-B JCS1N60C JCS1N60F-O-F-N-B JCS1N60F Package IPAK DPAK TO-263 TO-262 TO-220C TO-220MF Halogen Free NO NO NO NO NO NO Packaging Tube Tube Tube Tube Tube Tube Device Weight 0.35 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) ：201110B 1/16 R ABSOLUTE RATINGS (Tc=25℃) JCS1N60 Parameter Symbol JCS1N60V/R Value JCS1N60S/B/C － Drain-Source Voltage VDSS 600 Drain Current -continuous ID T=25℃ T=100℃ 1.3 0.84 （ 1） Drain Current - pulse （note 1） IDM 5.0 Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy（note 2） EAS 78 （ 1） Avalanche Curren（t note 1） IAR 1.3 （ 1） Repetitive Avalanche Current （note 1） EAR 3.9 （ 3） Peak Diode Recovery dv/dt 5.5 dv/dt （note 3） Power Dissipation PD TC=25℃ -Derate above 32 0.25 39 0.31 25℃ Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature for Sol...