R SCHOTTKY BARRIER DIODE
HBR20200
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A
200 V 175 ℃ 0.75V...
R
SCHOTTKY BARRIER DIODE
HBR20200
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A
200 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICATIONS
z High frequency switch power supply
z Free wheeling diodes, polarity protection applications
z z, z z, z(RoHS)
FEATURES
zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction
Temperature zGuard ring for overvoltage
protection,High reliability zRoHS product
TO-22OC TO-22OHF
TO-22OF
ORDER MESSAGE
Order codes
Marking
Package
HBR20200C
HBR20200 TO-220C
HBR20200CR
HBR20200 TO-220C
HBR20200F
HBR20200 TO-220F
HBR20200FR
HBR20200 TO-220F
HBR20200HF
HBR20200 TO-220HF
HBR20200HFR HBR20200 TO-220HF
Halogen Free NO YES NO YES NO YES
Packaging Tube Tube Tube Tube Tube Tube
Device Weight 2.15 g(typ) 2.15 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ) 1.70 g(typ)
(Rev.):201003G
1/7
R
ABSOLUTE RATINGS (Tc=25℃)
Parameter Repetitive peak reverse voltage
Symbol VRRM
Maximum DC blocking voltage
VDC
Average forward current
TC=150℃ (TO-220C) TC=125℃ (TO-220F, TO-220HF)
per device
per diode
IF(AV)
Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method)
IFSM
Maximum junction temperature
Tj
Storage temperature range
TSTG
HBR20200
Value
200
Unit
V
200 V
20 A
10
190 A
175 -40~+150
℃ ℃
ELECTRICAL CHARACTERISTICS
Parameter IR
Tests conditions
Tj =25℃ Tj =125℃
VR=VRRM
Value(min) Value(...