Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC Pc Tj Tstg
Limits −50 −50 −5 to +10 −100 200 150 −55 to +150
Unit V V V mA
mW °C °C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA113TLT1G
O2
1
3000/Tape & Reel
LDTA113TLT3G
O2
1
10000/Tape & Reel
LDTA113TLT1G
3
1 2 SOT–23
1 BASE
R1
3 COLLECTOR
2 EMITTER
zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE R1 fT ∗
Min. Typ. Max. Unit
Conditions
−50 − − V IC= −50µA
−50 − − V IC= −1mA
−5 − − V IE= −50µA
− − −0.5 µA VCB= −50V
− − −0.5 µA VEB= −4V
− − −0.3 V IC /IB= −5mA / −0.25mA
100 250 600
− IC= −1mA , VCE= −5V
0.7 1 1.3 kΩ
−
− 250 − MHz VCB= −10V , IE=5mA , f=100MHz
1/3
DC CURRENT GAIN : hFE
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristic curves
1k VCE= −5V
500
200 100
50
Ta=100°C 25°C
−40°C
20 10
5
2 1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC Current gain vs. Collector Current
LESHAN RADIO COMPANY, LTD. LDTA113TLT1G
−1m −500m
−200m −100m −50m
Ta=100°C 25°C
−40°C
IC/IB=20
−20m −10m −5m
−2m
−1m −100µ −200µ
−500µ −1m −2m
−5m −10m −20m −50m −100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage vs. Collector Current
2/3
LESHAN RADIO COMPANY, LTD. LDTA113TLT1G
A L
3 BS
12
VG
C
D
H K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037 0.95
0.035 0.9
0.037 0.95
0.079 2.0
0.031 0.8
inches mm
3/3
.