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LDTA143ELT1G Dataheets PDF



Part Number LDTA143ELT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistor
Datasheet LDTA143ELT1G DatasheetLDTA143ELT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off condi.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making the device design easy. 4) Higher mounting densities ca.n be achieved. z We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature VCC VIN IO IC(Max.) PD Tj Tstg Limits −50 −30 to +10 −100 −100 200 150 − 55 to +150 Unit V V mA mW °C °C LDTA143ELT1G 3 1 2 SOT–23 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA143ELT1G A6J 4.7 4.7 3000/Tape & Reel LDTA143ELT3G A6J 4.7 4.7 10000/Tape & Reel zExternal characteristics (Unit: mm) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗ Characteristics of built-in transistor Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗ Min. − −3 − − − 30 3.29 0.8 − Typ. − − −0.1 − − − 4.7 1 250 Max. −0.5 − −0.3 −1.8 −0.5 − 6.11 1.2 − Unit V V mA µA − kΩ − MHz Conditions VCC=−5V, IO=−100µA VO=−0.3V, IO=−20mA IO/II=−10mA/−0.5mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−10mA − − VCE=−10V, IE=5mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. zElectrical characteristics curves LDTA143ELT1G INPUT VOLTAGE : VI(on) (V) −100 VO=−0.3V −50 −20 −10 −5 Ta=−40°C 25°C −2 100°C −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : Io (A) −10m −5m −2m Ta=100°C 25°C −1m −40°C −500µ VCC=−5V −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) DC CURRENT GAIN : GI 1k VO=−5V 500 200 100 Ta=100°C 50 25°C −40°C 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current OUTPUT VOLTAGE : VO(on) (V) −1 lO/lI=20 −500m Ta=100°C −200m 25°C −40°C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/3 LESHAN RADIO COMPANY, LTD. LDTA143ELT1G A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 .


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