MVGSF1N03LT1G

MGSF1N03L, MVGSF1N03L Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space AEC−Q101 Qualified and PPAP Capable − MVGSF1N03LT1 These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Drain−to−Source Voltage VDSS 30 Gate−to−Source Voltage VGS ±20 Continuous Drain Current RqJL Steady TA = 25°C State TA = 85°C ID 2.1 1.5 Power Dissipation RqJL Steady TA = 25°C State PD 0.69 Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C ID 1.6 1.2 Power Dissipation (Note 1) TA = 25°C PD 0.42 Pulsed Drain Current ESD Capability (Note 3) tp = 10 ms C = 100 pF, RS = 1500 W IDM ESD 6.0 125 Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 sec) TJ, TSTG IS TL −55 to 150 2.1 260 Unit V V A W A W A V °C A °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Foot − Steady State RqJL 180 °C/W J...