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MGSF1N03L

ON Semiconductor

N-Channel MOSFET

MGSF1N03L, MVGSF1N03L MOSFET – Single, N-Channel, SOT-23 30 V, 2.1 A These miniature surface mount MOSFETs low RDS(on)...


ON Semiconductor

MGSF1N03L

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Description
MGSF1N03L, MVGSF1N03L MOSFET – Single, N-Channel, SOT-23 30 V, 2.1 A These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space MV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJL Steady TA = 25°C ID State TA = 85°C 2.1 A 1.5 Power Dissipation RqJL Steady TA = 25°C PD State 0.69 W Continuous Drain Current (Note 1) Steady TA = 25°C ID State TA = 85°C 1.6 A 1.2 Power Dissipation (Note 1) TA = 25°C PD 0.42 W Pulsed Drain Current ESD Capability (Note 3) tp = 10 ms IDM 6.0 A C = 100 pF, ESD 125 V RS = 1500 W Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 2.1 A Lead Temperature for Soldering Purposes TL 260 °C (1/8” from case for 10 sec) TH...




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