N-Channel MOSFET
MGSF1N03L, MVGSF1N03L
MOSFET – Single, N-Channel, SOT-23
30 V, 2.1 A
These miniature surface mount MOSFETs low RDS(on)...
Description
MGSF1N03L, MVGSF1N03L
MOSFET – Single, N-Channel, SOT-23
30 V, 2.1 A
These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Features
Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space MV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJL
Steady TA = 25°C
ID
State TA = 85°C
2.1
A
1.5
Power Dissipation RqJL
Steady TA = 25°C PD State
0.69
W
Continuous Drain Current (Note 1)
Steady TA = 25°C
ID
State
TA = 85°C
1.6
A
1.2
Power Dissipation (Note 1)
TA = 25°C PD
0.42
W
Pulsed Drain Current
ESD Capability (Note 3)
tp = 10 ms
IDM
6.0
A
C = 100 pF,
ESD
125
V
RS = 1500 W
Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C
Source Current (Body Diode)
IS
2.1
A
Lead Temperature for Soldering Purposes
TL
260
°C
(1/8” from case for 10 sec)
TH...
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