DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2361/2SK2362
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES • Low On-Resistance
2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A)
• Low Ciss Ciss = 1050 pF TYP. • High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2361.