Transistor
2SA1124
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementa...
Transistor
2SA1124
Silicon
PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SC2632
s Features
q Satisfactory foward current transfer ratio hFE collector current IC characteristics.
q High collector to emitter voltage VCEO. q Small collector output capacitance Cob. q Makes up a complementary pair with 2SC2632, which is opti-
mum for the pre-driver stage of a 40 to 60W output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –150 –150 –5 –100 –50 1 150
–55 ~ +150
Unit V V V mA mA W ˚C ˚C
5.9±0.2
Unit: mm
4.9±0.2
8.6±0.2
+0.3
0.7–0.2
0.7±0.1 2.54±0.15
13.5±0.5
0.45+–00..21 1.27
1.27
123
3.2
0.45+–00..21
1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage
ICBO VCEO VEBO hFE* VCE(sat)
VCB = –100V, IE = 0 IC = –0.1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA
–150 –5 130
–1 µA V V
450 –1 V
Transition frequency
fT VCB = –10V, IE = 10mA, f = 200MHz
200 MHz
Collector output capacitance Noise voltage
Cob ...