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SBR200-10JS

Sanyo

Schottky Barrier Diode

Ordering number : ENA0881 SBR200-10JS SANYO Semiconductors DATA SHEET SBR200-10JS Schottky Barrier Diode (Twin Type ·...


Sanyo

SBR200-10JS

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Description
Ordering number : ENA0881 SBR200-10JS SANYO Semiconductors DATA SHEET SBR200-10JS Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 20A Rectifier Applications High frequency rectification (switching regulators, converters, choppers). Features Low reverse current. Low switching noise. High reliability due to planar structure. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Electrical Characteristics at Ta=25°C Conditions 50Hz resistive load, Sine wave Tc=74°C 50Hz sine wave, 1 cycle Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Thermal Resistance Note) * : Value per element Symbol VR VF IR C Rth(j-c) Conditions IR=3mA, Tj=25°C* IF=10A, Tj=25°C* VR=100V, Tj=25°C* VR=10V, Tj=25°C* Junction-Case : Smoothed DC Ratings 100 105 20 180 --55 to +150 --55 to +150 Unit V V A A °C °C min 100 Ratings typ 280 max 0.88 1 3.5 Unit V V mA pF °C / W Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be ...




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