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MMBF2201N Dataheets PDF



Part Number MMBF2201N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet MMBF2201N DatasheetMMBF2201N Datasheet (PDF)

MMBF2201N, NVF2201N Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc−dc converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life.

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MMBF2201N, NVF2201N Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc−dc converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SC−70/SOT−323 Surface Mount Package Saves Board Space • NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed Drain Current (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C VDSS VGS ID ID IDM PD 20 Vdc ± 20 Vdc mAdc 300 240 750 150 mW 1.2 mW/°C Operating and Storage Temperature Range Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds TJ, Tstg RqJA TL − 55 to 150 833 260 °C °C/W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on G10/FR4 glass epoxy board using minimum recommended footprint. http://onsemi.com 300 mAMPS, 20 VOLTS RDS(on) = 1 W N−Channel 3 1 2 1 2 MARKING DIAGRAM AND PIN ASSIGNMENT 3 3 Drain SC−70/SOT−323 CASE 419 STYLE 8 N1 M G G 12 Gate Source N1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBF2201NT1G SOT−323 (Pb−Free) 3000 / Tape & Reel NVF2201NT1G* SOT−323 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 7 1 Publication Order Number: MMBF2201NT1/D MMBF2201N, NVF2201N ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V) Output Capacitance (VDS = 5.0 V) Transfer Capacitance (VDG = 5.0 V) SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 W) Fall Time Gate Charge (See Figure 5) SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 3) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. Symbol V(BR)DSS IDSS IGSS VGS(th) rDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf QT IS ISM VSD Min Typ Max Unit 20 − − Vdc mAdc − − 1.0 − − 10 − − ±100 nAdc 1.0 1.7 2.4 Vdc − 0.75 1.0 − 1.0 1.4 W − 450 − mMhos − 45 − − 25 − − 5.0 − pF − 2.5 − − 2.5 − − 15 − − 0.8 − − 1400 − ns pC − − 0.3 − − 0.75 − 0.85 − A V ID, DRAIN CURRENT (AMPS) RDS, ON RESISTANCE (OHMS) TYPICAL CHARACTERISTICS 1.0 0.9 0.8 VGS = 4 V 0.7 0.6 0.5 VGS = 3.5 V 0.4 0.3 VGS = 3 V 0.2 0.1 VGS = 2.5 V 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN - SOURCE VOLTAGE (VOLTS) Figure 1. Typical Drain Characteristics 1.6 1.4 1.2 VGS = 4.5 V 1.0 ID = 100 mA 0.8 0.6 VGS = 10 V ID = 300 mA 0.4 0.2 0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TEMPERATURE (°C) Figure 2. On Resistance versus Temperature http://onsemi.com 2 RDS, ON RESISTANCE (OHMS) MMBF2201N, NVF2201N TYPICAL CHARACTERISTICS 10 8 ID = 300 mA 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 GATE - SOURCE VOLTAGE (VOLTS) Figure 3. On Resistance versus Gate −Source Voltage RDS, ON RESISTANCE (OHMS) 1.2 1.0 VGS = 4.5 V 0.8 0.6 VGS = 10 V 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID, DRAIN CURRENT (AMPS) Figure 4. On Resistance versus Drain Current 1.0 0.1 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE - DRAIN FORWARD VOLTAGE (VOLTS) Figure 5. Source −Drain Forward Voltage 1.0 C, CAPACITANCE (pF) 45 40 VGS = 0 V F = 1 mHz 35 30 25 20 Ciss 15 .


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