MIP3550MTSCF

MIP3550MTSCF Type Application Structure Equivalent Circuit Package Silicon MOSFET type Integrated Circuit For Switching Power Supply Control CMOS type See Fig. 9 DIP7-A1-B Marking MIP355 Ａ．ABSOLUTE MAXIMUM RATINGS （Ta=25℃±3℃） NO. Item Symbol Ratings Unit Note 1 DRAIN Voltage 2 VDD Voltage 3 Feedback Voltage 4 Feedback Current 5 ｆ Voltage 6 CL Voltage 7 Output Peak Current 8 Channel Temperature 9 Storage Temperature ＶＤ ＶＤＤ ＶＦＢ ＩＦＢ Vｆ VCL ＩＤP Ｔｃｈ Ｔｓｔｇ －0.3 ～ 700 －0.3 ～ 8 －0.3 ～ 6 500 －0.3 ～ 8 －0.3 ～ 8 3（※1） １50 －55 ～ ＋１50 ※１： Ｖ It is guaranteed within the pulse as below. Ｖ Leading Edge Blanking Pulse + Current Limit Delay Ｖ ton(BLK)＋td(OCL) uA Ｖ Ｖ Ａ ℃ ℃ Ｂ．ELECTRICAL CHARACTERISTICS No. Item Measure Condition (TC=25℃±3℃) Symbol Measure Condition （See Fig. 1） Typ. Min. Max. Unit 【CONTROL FUNCTIONS】 *Design Guarantee Item 1 Output Frequency fosc VD=5V, VDD=VDD(ON)+0.1V, IFB=30uA Vf=VDD, VCL=0V, after dis_OLP 43.5 2 Jitter Frequency Deviation *3 Jitter Frequency Modulation Rate 4 Maximum Duty Cycle 5 VDD Start Voltage 6 VDD Stop Voltage 7 VDD Hysteresis Δf fM MAXDC VD=5V, VDD=VDD(ON)+0.1V, IFB=30uA Vf=VDD, VCL=0V, after dis_OLP VD=5V, VDD=VDD(ON)+0.1V, IFB=30uA Vf=VDD, VCL=0V, after dis_OLP VD=5V, VDD=VDD(ON)+0.1V, IFB=30uA Vf=VDD, VCL=0V, after dis_OLP 3 150 70 VD=5V, IFB=30uA, VCL=0V, Vf=VDD VDD(ON) 5.9 VD=5V, IFB=30uA, VCL=0V, Vf=VDD VDD(OFF) 4.9 VDD(ON)-VDD(OFF) VDDHYS 1.0 39 1.2 － 65 5.4 4.4 0.5 48 kHz 4.8 ｋＨｚ － Hz 75 % 6.4 V 5.4 V 1.5 ...