LET16045C

LET16045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Datasheet - production data M243 epoxy sealed Figure 1. Pin out 1 3 Features Excellent thermal stability Common source configuration POUT (@28 V) = 45 W with 16 dB gain @ 1600 MHz BeO free package In compliance with the 2002/95/EC European directive Description The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications. 1. Drain 2. Gate 2 3. Source Order code LET16045C Table 1. Device summary Package M243 Branding LET16045C April 2014 This is information on a product in full production. DocID022224 Rev 3 1/9 www.st.com Maximum ratings 1 Maximum ratings LET16045C Symbol Table 2. Absolute maximum ratings (TCASE = 25 °C) Parameter Value V(BR)DSS VGS ID PDISS TJ TSTG Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 °C) Max. operating junction temperature Storage temperature 80 -0.5 to +15 9 100 200 -65 to +150 Unit V V A W °C °C Table 3. Thermal data Symbol Parameter Rth(JC) Junction-case thermal resistance Value 1.3 Unit °C/W 2/9 DocID022224 Rev 3 LET16045C 2 Electrical characteristics TC = 25 °C Symbol Table 4. Static T...