Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC Pc Tj Tstg
Limits −50 −50 −5 to +10 −100 200 150 −55 to +150
Unit V V V mA
mW °C °C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA113TWT1G
91
1
3000/Tape & Reel
LDTA113TWT3G
91
1
10000/Tape & Reel
LDTA113TWT1G
3 1
2 SOT–323 (SC–70)
1 BASE
R1
3 COLLECTOR
2 EMITTER
zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE R1 fT ∗
Min. Typ. Max. Unit
Conditions
−50 − − V IC= −50µA
−50 − − V IC= −1mA
−5 − − V IE= −50µA
− − −0.5 µA VCB= −50V
− − −0.5 µA VEB= −4V
− − −0.3 V IC /IB= −5mA / −0.25mA
100 250 600
− IC= −1mA , VCE= −5V
0.7 1 1.3 kΩ
−
− 250 − MHz VCB= −10V , IE=5mA , f=100MHz
1/3
DC CURRENT GAIN : hFE
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristic curves
1k VCE= −5V
500
200 100
50
Ta=100°C 25°C
−40°C
20 10
5
2 1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC Current gain vs. Collector Current
LESHAN RADIO COMPANY, LTD. LDTA113TWT1G
−1m −500m
−200m −100m −50m
Ta=100°C 25°C
−40°C
IC/IB=20
−20m −10m −5m
−2m
−1m −100µ −200µ
−500µ −1m −2m
−5m −10m −20m −50m −100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage vs. Collector Current
2/3
LESHAN RADIO COMPANY, LTD. LDTA113TWT1G
SC−70 (SOT−323)
D e1
3
HE
1
E
2
b e
0.05 (0.002)
A1
A A2
SOLDERING FOOTPRINT*
0.65 0.025
0.65 0.025
L
0.9 0.035
0.7 0.028
1.9 0.075
ǒ ǓSCALE 10:1
mm inches
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.7 REF
b 0.30 0.35 0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40 e1 0.65 BSC
L 0.425 REF
c H E 2.00 2.10 2.40
MIN 0.032 0.000
0.012 0.004 0.071 0.045 0.047
0.079
INCHES
NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083
MAX 0.040 0.004
0.016 0.010 0.087 0.053 0.055
0.095
GENERIC MARKING DIAGRAM
XXM
1
XX = Specific Device Code M = Date Code G = Pb−Free Package
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present.
3/3
.