Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Symbol
VCC
Input voltage
VIN
Output current
IO IC(Max.)
Power dissipation
PD
Junction temperature
Tj
Storage temperature
Tstg
Limits
−50 −12 to +10
−100 −100
200 150 −55 to +150
Unit V V mA mA
mW °C °C
LDTA123EWT1G
3 1
2 SOT–323 (SC–70)
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA123EWT1G
6H
2.2 2.2 3000/Tape & Reel
LDTA123EWT3G
6H
2.2 2.2 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency
∗ Characteristics of built-in transistor
Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗
Min. − −3 − − − 20
1.54 0.8 −
Typ. − −
−0.1 − − − 2.2 1
250
Max. −0.5
− −0.3 −3.8 −0.5
− 2.86 1.2
−
Unit
V
V mA µA − kΩ − MHz
Conditions VCC=−5V, IO=−100µA VO=−0.3V, IO=−20mA IO/II=−10mA/−0.5mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−20mA
− − VCE=−10V, IE=5mA, f=100MHz
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LESHAN RADIO COMPANY, LTD. LDTA123EWT1G
INPUT VOLTAGE : VI(on) (V)
zElectrical characteristic curves
100 VO=−0.3V
50
20 10
Ta=−40°C 5 25°C
100°C 2
1 500m
200m 100m
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
OUTPUT CURRENT : IO (A)
10m 5m VCC=−5V
2m
1m
500µ Ta=100°C
200µ
25°C −40°C
100µ
50µ
20µ
10µ 5µ
2µ
1µ 0
−0.5 −1.0 −1.5 −2.0 −2.5 −3.0
INPUT VOLTAGE : VI(off) (V)
Fig.2 Output current vs. input voltage (OFF characteristics)
DC CURRENT GAIN : GI
1k VO=−5V
500
200 100 50 Ta=100°C
25°C 20 −40°C 10
5
2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output current
OUTPUT VOLTAGE : VO(on) (V)
1 IO/II=20
500m
200m 100m
Ta=100°C 50m
25°C 20m −40°C 10m 5m
2m 1m
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
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LESHAN RADIO COMPANY, LTD. LDTA123EWT1G
SC−70 (SOT−323)
D e1
3
HE
1
E
2
b e
0.05 (0.002)
A1
A A2
SOLDERING FOOTPRINT*
0.65 0.025
0.65 0.025
L
0.9 0.035
0.7 0.028
1.9 0.075
ǒ ǓSCALE 10:1
mm inches
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTRO.