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LDTA123EWT1G Dataheets PDF



Part Number LDTA123EWT1G
Manufacturers LRC
Logo LRC
Description Bias Resistor Transistor
Datasheet LDTA123EWT1G DatasheetLDTA123EWT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely elimin.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Symbol VCC Input voltage VIN Output current IO IC(Max.) Power dissipation PD Junction temperature Tj Storage temperature Tstg Limits −50 −12 to +10 −100 −100 200 150 −55 to +150 Unit V V mA mA mW °C °C LDTA123EWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA123EWT1G 6H 2.2 2.2 3000/Tape & Reel LDTA123EWT3G 6H 2.2 2.2 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗ Characteristics of built-in transistor Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗ Min. − −3 − − − 20 1.54 0.8 − Typ. − − −0.1 − − − 2.2 1 250 Max. −0.5 − −0.3 −3.8 −0.5 − 2.86 1.2 − Unit V V mA µA − kΩ − MHz Conditions VCC=−5V, IO=−100µA VO=−0.3V, IO=−20mA IO/II=−10mA/−0.5mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−20mA − − VCE=−10V, IE=5mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. LDTA123EWT1G INPUT VOLTAGE : VI(on) (V) zElectrical characteristic curves 100 VO=−0.3V 50 20 10 Ta=−40°C 5 25°C 100°C 2 1 500m 200m 100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : IO (A) 10m 5m VCC=−5V 2m 1m 500µ Ta=100°C 200µ 25°C −40°C 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) DC CURRENT GAIN : GI 1k VO=−5V 500 200 100 50 Ta=100°C 25°C 20 −40°C 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current OUTPUT VOLTAGE : VO(on) (V) 1 IO/II=20 500m 200m 100m Ta=100°C 50m 25°C 20m −40°C 10m 5m 2m 1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/3 LESHAN RADIO COMPANY, LTD. LDTA123EWT1G SC−70 (SOT−323) D e1 3 HE 1 E 2 b e 0.05 (0.002) A1 A A2 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 L 0.9 0.035 0.7 0.028 1.9 0.075 ǒ ǓSCALE 10:1 mm inches NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTRO.


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