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LDTC125TWT1G Dataheets PDF



Part Number LDTC125TWT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistor
Datasheet LDTC125TWT1G DatasheetLDTC125TWT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely elimi.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 200 150 −55 to +150 Unit V V V mA mW °C °C LDTC125TWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R1 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC125TWT1G H7 200 3000/Tape & Reel LDTC125TWT3G H7 200 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT ∗ Min. 50 50 5 − − − 100 140 − Typ. − − − − − − 250 200 250 Max. − − − 0.5 0.5 0.3 600 260 − Unit V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC=0.5mA , IB=0.05mA IC=1mA , VCE=5V − VCE=10V , IE= −5mA , f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. LDTC125TWT1G zElectrical characteristic curves DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1k VCE=5V 500 Ta=100°C 200 100 Ta=25°C Ta= −40°C 50 20 10 5 2 1 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current 1 IC/IB=10/1 500m 200m 100m 50m Ta=100°C Ta=25°C 20m Ta= −40°C 10m 5m 2m 1m 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current 2/3 LESHAN RADIO COMPANY, LTD. LDTC125TWT1G SC−70 (SOT−323) D e1 3 HE 1 E 2 b e 0.05 (0.002) A1 A A2 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 L 0.9 0.035 0.7 0.028 1.9 0.075 ǒ ǓSCALE 10:1 mm inches NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A2 0.7 REF b 0.30 0.35 0.40 c 0.10 0.18 0.25 D 1.80 2.10 2.20 E 1.15 1.24 1.35 e 1.20 1.30 1.40 e1 0.65 BSC L 0.425 REF c H E 2.00 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 GENERIC MARKING DIAGRAM XXM 1 XX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 3/3 .


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