Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Collector power dissipation
Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC
Pc
Tj Tstg
Limits 50 50 5 100
200
150 −55 to +150
Unit V V V mA
mW
°C °C
LDTC125TWT1G
3
1 2
SOT–323 (SC–70)
1 BASE
R1
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC125TWT1G
H7
200
3000/Tape & Reel
LDTC125TWT3G
H7
200
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE R1
fT ∗
Min.
50 50 5 − − − 100 140 −
Typ.
− − − − − − 250 200 250
Max. − − −
0.5 0.5 0.3 600 260 −
Unit
V V V µA µA V − kΩ MHz
Conditions
IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC=0.5mA , IB=0.05mA IC=1mA , VCE=5V
− VCE=10V , IE= −5mA , f=100MHz
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LESHAN RADIO COMPANY, LTD. LDTC125TWT1G
zElectrical characteristic curves
DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1k
VCE=5V
500
Ta=100°C
200
100
Ta=25°C
Ta= −40°C
50
20 10
5
2
1 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. Collector current
1
IC/IB=10/1
500m
200m 100m
50m
Ta=100°C
Ta=25°C
20m
Ta= −40°C
10m
5m
2m
1m 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage vs. Collector current
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LESHAN RADIO COMPANY, LTD. LDTC125TWT1G
SC−70 (SOT−323)
D e1
3
HE
1
E
2
b e
0.05 (0.002)
A1
A A2
SOLDERING FOOTPRINT*
0.65 0.025
0.65 0.025
L
0.9 0.035
0.7 0.028
1.9 0.075
ǒ ǓSCALE 10:1
mm inches
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.80
0.90
1.00
A1 0.00
0.05
0.10
A2 0.7 REF
b 0.30 0.35 0.40
c 0.10 0.18 0.25
D 1.80
2.10
2.20
E 1.15
1.24
1.35
e 1.20 1.30 1.40 e1 0.65 BSC
L 0.425 REF
c H E 2.00 2.10 2.40
MIN 0.032 0.000
0.012 0.004 0.071 0.045 0.047
0.079
INCHES
NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083
MAX 0.040 0.004
0.016 0.010 0.087 0.053 0.055
0.095
GENERIC MARKING DIAGRAM
XXM
1
XX = Specific Device Code M = Date Code G = Pb−Free Package
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present.
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