Document
Automotive Grade Start-Stop Non-Synchronous Boost Controller
NCV8877
The NCV8877 is a Non-Synchronous Boost controller designed to supply a minimum output voltage during Start-Stop vehicle operation battery voltage sags. The controller drives an external N-channel MOSFET. The device uses peak current mode control with internal slope compensation. The IC incorporates an internal regulator that supplies charge to the gate driver.
Protection features include, cycle-by-cycle current limiting and thermal shutdown.
Additional features include low quiescent current sleep mode operation. The NCV8877 is enabled when the supply voltage drops below the wake up threshold. Boost Operation is initiated when the supply voltage drops below the regulation set point.
Features
• Automatic Enable Below Wake Up Threshold Voltage (Factory
Programmable)
• Override Disable Function • Boost Mode Operation at Regulation Set Point • $2% Output Accuracy Over Temperature Range • Peak Current Mode Control with Internal Slope Compensation • Externally Adjustable Frequency Operation • Wide Input Voltage Range of 2 V to 40 V, 45 V Load Dump • Low Quiescent Current in Sleep Mode (<12 mA Typical) • Cycle−by−Cycle Current Limit Protection • Hiccup−Mode Overcurrent Protection (OCP) • Thermal Shutdown (TSD) • This is a Pb−Free Device • NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Typical Applications
• Applications Requiring Regulated Voltage through Cranking and
Start−Stop Operation
DATA SHEET www.onsemi.com
8 1
SOIC−8 D SUFFIX CASE 751 STYLE N/A
MARKING DIAGRAM 8
8877xxG ALYW G
1
8877xxG= Specific Device Code
xx
= 01, 11, 20,
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
PIN CONNECTIONS
DISB 1 ISNS 2 GND 3 GDRV 4
8 ROSC 7 VC 6 VOUT 5 VDRV
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NCV887701D1R2G NCV887711D1R2G NCV887720D1R2G
SOIC−8 (Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
September, 2023 − Rev. 12
Publication Order Number: NCV8877/D
NCV8877
BATTERY IN
LP Cg DISABLE
CDRV
VDRV
ROSC
ROSC
DISB
GDRV
ISNS
NRVB440MFS VOUT
DB
Co
Q NVMFS5844NL
RSNS
VC RC
CC
GND
VOUT
Figure 1. Typical Application
Battery In
Sleep Threshold Wake Up Threshold
Regulation
VOUT
(Internal signal)
DISB
Internal Clamp Voltage
COMP
Wakeup
GDRV
Wake Up Delay GDRV Switching Delay
Figure 2. Functional Waveforms
PACKAGE PIN DESCRIPTIONS
Pin No.
Pin Symbol
Function
1
DISB
Disable input. This part is disabled when this pin is brought low.
2
ISNS
Current sense input. Connect this pin to the source of the external N−MOSFET, through a current−sense res-
istor to ground to sense the switching current for regulation and current limiting.
3
GND
Ground reference.
4
GDRV Gate driver output. Connect to gate of the external N−MOSFET. A series resistance can be added from GDRV
to the gate to tailor EMC performance.
5
VDRV
Driving voltage. Internally−regulated supply for driving the external N−MOSFET, sourced from VOUT. Bypass
with a 1.0 mF ceramic capacitor to ground.
6
VOUT
Monitors output voltage and provides IC input voltage.
7
VC
Output of the voltage error transconductance amplifier. An external compensator network from VC to GND is
used to stabilize the converter.
8
ROSC Use a resistor to ground to set the frequency.
www.onsemi.com 2
NCV8877
ABSOLUTE MAXIMUM RATINGS (Voltages are with respect to GND, unless otherwise indicated)
Rating
Value
Unit
Dc Supply Voltage (VOUT)
−0.3 to 40
V
Peak Transient Voltage (Load Dump on VOUT)
45
V
Dc Supply Voltage (VDRV, GDRV)
12
V
Dc Voltage (VC, ISNS, ROSC)
−0.3 to 3.6
V
Dc Voltage (DISB)
−0.3 to 6
V
Dc Voltage Stress (VOUT − VDRV)
−0.7 to 40
V
Operating Junction Temperature
−40 to 150
°C
Storage Temperature Range
−65 to 150
°C
Peak Reflow Soldering Temperature: Pb−Free, 60 to 150 seconds at 217°C
265 peak
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
PACKAGE CAPABILITIES ESD Capability (All Pins)
Characteristic
Moisture Sensitivity Level Package Thermal Resistance 1. 1 in2, 1 oz copper area used for heatsinking.
Human Body Model Machine Model
Junction−to−Ambient, RqJA (Note 1)
Value ≥2.0 ≥200
1
100
Unit kV V
°C/W
TYPICAL VALUES Part No.
NCV887701 NCV887711 NCV887720
Dmax 83% 83% 83%
fS 170 kHz 170 kHz 170 kHz
Sa 53 mV/ms 53 mV/ms 53 mV/ms
Vcl 200 mV 200 mV 200 mV
Isrc 800 mA 800 mA 800 mA
Isink 600 mA 600 mA 600 mA
VOUT 6.8 V 8.55 V 1.