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NCV8877 Dataheets PDF



Part Number NCV8877
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Automotive Grade Start-Stop Non-Synchronous Boost Controller
Datasheet NCV8877 DatasheetNCV8877 Datasheet (PDF)

Automotive Grade Start-Stop Non-Synchronous Boost Controller NCV8877 The NCV8877 is a Non-Synchronous Boost controller designed to supply a minimum output voltage during Start-Stop vehicle operation battery voltage sags. The controller drives an external N-channel MOSFET. The device uses peak current mode control with internal slope compensation. The IC incorporates an internal regulator that supplies charge to the gate driver. Protection features include, cycle-by-cycle current limiting and the.

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Automotive Grade Start-Stop Non-Synchronous Boost Controller NCV8877 The NCV8877 is a Non-Synchronous Boost controller designed to supply a minimum output voltage during Start-Stop vehicle operation battery voltage sags. The controller drives an external N-channel MOSFET. The device uses peak current mode control with internal slope compensation. The IC incorporates an internal regulator that supplies charge to the gate driver. Protection features include, cycle-by-cycle current limiting and thermal shutdown. Additional features include low quiescent current sleep mode operation. The NCV8877 is enabled when the supply voltage drops below the wake up threshold. Boost Operation is initiated when the supply voltage drops below the regulation set point. Features • Automatic Enable Below Wake Up Threshold Voltage (Factory Programmable) • Override Disable Function • Boost Mode Operation at Regulation Set Point • $2% Output Accuracy Over Temperature Range • Peak Current Mode Control with Internal Slope Compensation • Externally Adjustable Frequency Operation • Wide Input Voltage Range of 2 V to 40 V, 45 V Load Dump • Low Quiescent Current in Sleep Mode (<12 mA Typical) • Cycle−by−Cycle Current Limit Protection • Hiccup−Mode Overcurrent Protection (OCP) • Thermal Shutdown (TSD) • This is a Pb−Free Device • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Typical Applications • Applications Requiring Regulated Voltage through Cranking and Start−Stop Operation DATA SHEET www.onsemi.com 8 1 SOIC−8 D SUFFIX CASE 751 STYLE N/A MARKING DIAGRAM 8 8877xxG ALYW G 1 8877xxG= Specific Device Code xx = 01, 11, 20, A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package PIN CONNECTIONS DISB 1 ISNS 2 GND 3 GDRV 4 8 ROSC 7 VC 6 VOUT 5 VDRV (Top View) ORDERING INFORMATION Device Package Shipping† NCV887701D1R2G NCV887711D1R2G NCV887720D1R2G SOIC−8 (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 1 September, 2023 − Rev. 12 Publication Order Number: NCV8877/D NCV8877 BATTERY IN LP Cg DISABLE CDRV VDRV ROSC ROSC DISB GDRV ISNS NRVB440MFS VOUT DB Co Q NVMFS5844NL RSNS VC RC CC GND VOUT Figure 1. Typical Application Battery In Sleep Threshold Wake Up Threshold Regulation VOUT (Internal signal) DISB Internal Clamp Voltage COMP Wakeup GDRV Wake Up Delay GDRV Switching Delay Figure 2. Functional Waveforms PACKAGE PIN DESCRIPTIONS Pin No. Pin Symbol Function 1 DISB Disable input. This part is disabled when this pin is brought low. 2 ISNS Current sense input. Connect this pin to the source of the external N−MOSFET, through a current−sense res- istor to ground to sense the switching current for regulation and current limiting. 3 GND Ground reference. 4 GDRV Gate driver output. Connect to gate of the external N−MOSFET. A series resistance can be added from GDRV to the gate to tailor EMC performance. 5 VDRV Driving voltage. Internally−regulated supply for driving the external N−MOSFET, sourced from VOUT. Bypass with a 1.0 mF ceramic capacitor to ground. 6 VOUT Monitors output voltage and provides IC input voltage. 7 VC Output of the voltage error transconductance amplifier. An external compensator network from VC to GND is used to stabilize the converter. 8 ROSC Use a resistor to ground to set the frequency. www.onsemi.com 2 NCV8877 ABSOLUTE MAXIMUM RATINGS (Voltages are with respect to GND, unless otherwise indicated) Rating Value Unit Dc Supply Voltage (VOUT) −0.3 to 40 V Peak Transient Voltage (Load Dump on VOUT) 45 V Dc Supply Voltage (VDRV, GDRV) 12 V Dc Voltage (VC, ISNS, ROSC) −0.3 to 3.6 V Dc Voltage (DISB) −0.3 to 6 V Dc Voltage Stress (VOUT − VDRV) −0.7 to 40 V Operating Junction Temperature −40 to 150 °C Storage Temperature Range −65 to 150 °C Peak Reflow Soldering Temperature: Pb−Free, 60 to 150 seconds at 217°C 265 peak °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE CAPABILITIES ESD Capability (All Pins) Characteristic Moisture Sensitivity Level Package Thermal Resistance 1. 1 in2, 1 oz copper area used for heatsinking. Human Body Model Machine Model Junction−to−Ambient, RqJA (Note 1) Value ≥2.0 ≥200 1 100 Unit kV V °C/W TYPICAL VALUES Part No. NCV887701 NCV887711 NCV887720 Dmax 83% 83% 83% fS 170 kHz 170 kHz 170 kHz Sa 53 mV/ms 53 mV/ms 53 mV/ms Vcl 200 mV 200 mV 200 mV Isrc 800 mA 800 mA 800 mA Isink 600 mA 600 mA 600 mA VOUT 6.8 V 8.55 V 1.


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