LDTBG12GPT3G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPT1G zApplications Driver zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load). We declare that the material of product compliance with RoHS requirements. zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits -60±10 -60 ±10 -5 -1 -2 ∗1 0.5 2 ∗2 150 −55 to +150 Unit V V V A A W °C °C ∗1 Pw≤10ms, Duty cycle≤1/2 ∗2 When mounted on a 40×40×0.7 mm ceramic board. DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping 3 1 2 SOT-23 1 BASE R1 R 3 COLLECTOR R=10kΩ 2 EMITTER LDTBG12GPT1G Q8 1 22 3000/Tape & Reel LDTBG12GPT3G Q8 1 22 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Symbol BVCBO BVCEO BVEBO ICBO...