W5NB100

® TYPE STW5NB100 VDSS 1000 V STW5NB100 N - CHANNEL 1000V - 4Ω - 4.3A - TO-247 PowerMESH™ MOSFET RDS(on) < 4.4 Ω ID 4.3 A PRELIMINARY DATA s TYPICAL RDS(on) = 4 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s REDUCED VOLTAGE SPREAD DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR VGS ID ID Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC IDM() Ptot Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature () Pulse width limited by safe operating area June 1998 Value Unit 1000 V 1000 V ± 30 V 4.3 A 2.7 A 17...