SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION.
FEATURES High Voltage : BC237...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION.
FEATURES High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). For Complementary With
PNP type BC307/308/309.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
BC237
Collector-Base Voltage
BC238
BC239
BC237
Collector-Emitter Voltage
BC238
BC239
BC237
Emitter-Base Voltage
BC238
BC239
BC237
Collector Current
BC238
BC239
BC237
Emitter Current
BC238
BC239
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL VCBO
VCEO
VEBO
IC
IE PC Tj Tstg
RATING 50 30 30 45 20 20 6 5 5 100 100 50 -100 -50 -50 625 150
-55 150
UNIT V V V mA mA mW
L M
C
BC237/8/9
EPITAXIAL PLANAR
NPN TRANSISTOR
BC
JA
KE G
D
H FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. COLLECTOR 2. BASE 3. EMITTER
TO-92
1994. 3. 2
Revision No : 0
1/2
BC237/8/9
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
DC Current Gain (Note)
BC237 BC238 BC239
ICBO hFE
Collector-Emitter Saturation Voltage
BC237 BC238 BC239
VCE(sat)
Base-Emitter Saturation Voltage
BC237 BC238 BC239
VBE(sat)
Base-Emitter Voltage Transition Frequency Collector Output Capacitance
VBE(ON) fT Cob
BC237
Noise Figure
BC238
NF
BC239
TEST CONDITION VCB=50V, IE=0
VCE=5V, IC=2mA
IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, ...