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LDTC123YET1G Dataheets PDF



Part Number LDTC123YET1G
Manufacturers LRC
Logo LRC
Description Bias Resistor Transistor
Datasheet LDTC123YET1G DatasheetLDTC123YET1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely elimi.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature VCC VIN IO IC(Max.) Pd Tj Tstg Limits 50 −5 to +12 100 100 200 150 −55 to +150 LDTC123YET1G 3 1 2 SC-89 1 BASE R1 R2 Unit V V mA mW °C °C 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC123YET1G N8 2.2 10 3000/Tape & Reel LDTC123YET3G N8 2.2 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Input voltage VI(off) VI(on) − 3 Output voltage VO(on) − Input current II − Output current IO(off) − DC current gain GI 33 Input resistance R1 1.54 Resistance ratio Transition frequency R2/R1 fT ∗ 3.6 − ∗ Characteristics of built-in transistor Typ. − − 0.1 − − − 2.2 4.5 250 Max. 0.3 − 0.3 3.8 0.5 − 2.86 5.5 − Unit V V mA µA − kΩ − MHz Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=10mA − − VCE=10V, IE= −5mA, f=100MHz 1/3 z Electrical characteristic curves LESHAN RADIO COMPANY, LTD. LDTC123YET1G 2/3 LESHAN RADIO COMPANY, LTD. LDTC123YET1G SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. 3/3 .


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