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LBC848CPDW1T1G Dataheets PDF



Part Number LBC848CPDW1T1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Dual-Channel Transistor
Datasheet LBC848CPDW1T1G DatasheetLBC848CPDW1T1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION .

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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LBC846BPDW1T1G S-LBC846BPDW1T1G LBC846BPDW1T3G S-LBC846BPDW1T3G LBC847BPDW1T1G S-LBC847BPDW1T1G LBC847BPDW1T3G S-LBC847BPDW1T3G LBC847CPDW1T1G S-LBC847CPDW1T1G LBC847CPDW1T3G S-LBC847CPDW1T3G LBC848BPDW1T1G S-LBC848BPDW1T1G LBC848BPDW1T3G S-LBC848BPDW1T3G LBC848CPDW1T1G LBC848CPDW1T3G S-LBC848CPDW1T1G S-LBC848CPDW1T3G Marking BB BB BF BF BG BG BK BK BL BL Shipping 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel MAXIMUM RATINGS - NPN Rating Symbol LBC846 LBC847 LBC848 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VCEO VCBO VEBO 65 80 6.0 45 30 50 30 6.0 5.0 V V V Collector Current Ð Continuous IC 100 100 100 mAdc LBC846BPDW1T1G LBC847BPDW1T1G LBC847CPDW1T1G LBC848BPDW1T1G LBC848CPDW1T1G S-LBC846BPDW1T1G S-LBC847BPDW1T1G S-LBC847CPDW1T1G S-LBC848BPDW1T1G S-LBC848CPDW1T1G 6 5 4 1 2 3 SOT-363/SC-88 CASE 419B STYLE 1 3 21 Q1 Q2 45 6 DEVICE MARKING MAXIMUM RATINGS - PNP Rating Symbol LBC846 LBC847 LBC848 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Ð Continuous VCEO VCBO VEBO IC -65 -80 -5.0 -100 -45 -50 -5.0 -100 -30 -30 -5.0 -100 V V V mAdc See Table THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation Per Device FR-5 Board (1) TA = 25˚C Derate Above 25˚C PD Thermal Resistance, Junction to Ambient RθJA Junction and Storage Temperature Range TJ, Tstg 1. FR-5 = 1.0 x 0.75 x 0.062 in Max 380 250 3.0 328 -55 to +150 Unit mW mW/˚C ˚C/W ˚C Rev.O 1/9 LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series,S-LBC848BPDW1T1G Series ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) LBC846 Series LBC847 Series LBC848 Series V(BR)CEO 65 — — 45 — — 30 — — V Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) LBC846 Series LBC847B Only LBC848 Series V(BR)CES 80 — — 50 — — 30 — — V Collector–Base Breakdown Voltage (IC = 10 mA) LBC846 Series LBC847 Series LBC848 Series V(BR)CBO 80 — — 50 — — 30 — — V Emitter–Base Breakdown Voltage (IE = 1.0 mA) LBC846 Series LBC847 Series LBC848 Series V(BR)EBO 6.0 — — 6.0 — — 5.0 — — V Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO — — 15 nA — — 5.0 µA ON CHARACTERISTICS DC Current Gain hFE — (IC = 2.0 mA, VCE = 5.0 V) LBC846B, LBC847B, LBC848B LBC847C, LBC848C 200 290 475 420 520 800 Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) VCE(sat) — — — 0.25 V — 0.6 VBE(sat) — 0.7 — — 0.9 — V VBE(on) 580 660 700 mV — — 770 fT 100 — — MHz Cobo — — 4.5 pF NF dB — — 10 Rev.O 2/9 LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series,S-LBC848BPDW1T1G Series ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) LBC846 Series LBC847 Series LBC848 Series V(BR)CEO Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) LBC846 Series LBC847 Series LBC848 Series V(BR)CES Collector–Base Breakdown Voltage (IC = –10 mA) LBC846 Series LBC847 Series LBC848 Series V(BR)CBO Emitter–Base Breakdown Voltage (IE = –1.0 mA) LBC846 Series LBC847 Series LBC848 Series V(BR)EBO Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = –10 µA, VCE = –5.0 V) LBC846B, LBC847B, LBC848B LBC847C, LBC848C hFE (IC = –2.0 mA, VCE = –5.0 V) LBC846B, LBC847B, LBC848B LBC847C, LBC848C Collector–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base–Emitter Saturation Voltage (IC = –10 mA.


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