Document
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN/PNP Duals (Complimentary)
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device LBC846BPDW1T1G S-LBC846BPDW1T1G LBC846BPDW1T3G S-LBC846BPDW1T3G LBC847BPDW1T1G S-LBC847BPDW1T1G LBC847BPDW1T3G S-LBC847BPDW1T3G LBC847CPDW1T1G S-LBC847CPDW1T1G
LBC847CPDW1T3G S-LBC847CPDW1T3G
LBC848BPDW1T1G S-LBC848BPDW1T1G
LBC848BPDW1T3G S-LBC848BPDW1T3G
LBC848CPDW1T1G LBC848CPDW1T3G
S-LBC848CPDW1T1G S-LBC848CPDW1T3G
Marking
BB BB BF BF
BG BG BK
BK
BL BL
Shipping 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel
3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel
MAXIMUM RATINGS - NPN
Rating
Symbol LBC846 LBC847 LBC848 Unit
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
VCEO VCBO VEBO
65 80 6.0
45 30 50 30 6.0 5.0
V V V
Collector Current Ð Continuous
IC 100 100 100 mAdc
LBC846BPDW1T1G LBC847BPDW1T1G LBC847CPDW1T1G LBC848BPDW1T1G LBC848CPDW1T1G
S-LBC846BPDW1T1G S-LBC847BPDW1T1G S-LBC847CPDW1T1G S-LBC848BPDW1T1G S-LBC848CPDW1T1G
6 5
4
1 2
3
SOT-363/SC-88 CASE 419B STYLE 1
3 21
Q1 Q2
45
6
DEVICE MARKING
MAXIMUM RATINGS - PNP
Rating
Symbol LBC846 LBC847 LBC848 Unit
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current Ð Continuous
VCEO VCBO VEBO
IC
-65 -80 -5.0 -100
-45 -50 -5.0 -100
-30 -30 -5.0 -100
V V V mAdc
See Table
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device FR-5 Board (1)
TA = 25˚C Derate Above 25˚C
PD
Thermal Resistance, Junction to Ambient
RθJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR-5 = 1.0 x 0.75 x 0.062 in
Max 380 250
3.0 328
-55 to +150
Unit mW
mW/˚C ˚C/W ˚C
Rev.O 1/9
LESHAN RADIO COMPANY, LTD.
LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series,S-LBC848BPDW1T1G Series
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mA)
LBC846 Series LBC847 Series LBC848 Series
V(BR)CEO 65 — —
45 — —
30 — —
V
Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0)
LBC846 Series LBC847B Only LBC848 Series
V(BR)CES 80 — —
50 — —
30 — —
V
Collector–Base Breakdown Voltage (IC = 10 mA)
LBC846 Series LBC847 Series LBC848 Series
V(BR)CBO 80 — —
50 — —
30 — —
V
Emitter–Base Breakdown Voltage (IE = 1.0 mA)
LBC846 Series LBC847 Series LBC848 Series
V(BR)EBO 6.0 — —
6.0 — —
5.0 — —
V
Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C)
ICBO — — 15 nA — — 5.0 µA
ON CHARACTERISTICS
DC Current Gain
hFE —
(IC = 2.0 mA, VCE = 5.0 V)
LBC846B, LBC847B, LBC848B LBC847C, LBC848C
200 290 475 420 520 800
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
VCE(sat)
— —
— 0.25 V — 0.6
VBE(sat)
—
0.7
—
— 0.9 —
V
VBE(on)
580
660
700
mV
— — 770
fT
100 —
— MHz
Cobo — — 4.5 pF
NF dB — — 10
Rev.O 2/9
LESHAN RADIO COMPANY, LTD.
LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series,S-LBC848BPDW1T1G Series
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mA)
LBC846 Series LBC847 Series LBC848 Series
V(BR)CEO
Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0)
LBC846 Series LBC847 Series LBC848 Series
V(BR)CES
Collector–Base Breakdown Voltage (IC = –10 mA)
LBC846 Series LBC847 Series LBC848 Series
V(BR)CBO
Emitter–Base Breakdown Voltage (IE = –1.0 mA)
LBC846 Series LBC847 Series LBC848 Series
V(BR)EBO
Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C)
ICBO
ON CHARACTERISTICS
DC Current Gain (IC = –10 µA, VCE = –5.0 V)
LBC846B, LBC847B, LBC848B LBC847C, LBC848C
hFE
(IC = –2.0 mA, VCE = –5.0 V) LBC846B, LBC847B, LBC848B LBC847C, LBC848C
Collector–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA)
Base–Emitter Saturation Voltage (IC = –10 mA.