Document
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G
S-LBC846ADW1T1G S-LBC846BDW1T1G S-LBC847BDW1T1G S-LBC847CDW1T1G S-LBC848BDW1T1G S-LBC848CDW1T1G
Q2 Q1 See Table
6 5
4
12
MAXIMUM RATINGS
3
Rating
Symbol
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current -Continuous
V CEO V CBO V EBO
IC
BC846 65 80 6.0 100
BC847 BC848 45 30 50 30 6.0 5.0 100 100
Unit V V V
mAdc
1 2
3
SOT-363 /SC-88
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in.
Symbol PD
R θJA T J , T stg
Max Unit 380 mW 250 mW
3.0 328 –55 to +150
mW/°C °C/W
°C
ORDERING INFORMATION
LBC846ADW1T1G LBC846ADW1T3G
Device S-LBC846ADW1T1G S-LBC846ADW1T3G
LBC846BDW1T1G LBC846BDW1T3G LBC847BDW1T1G LBC847BDW1T3G LBC847CDW1T1G
S-LBC846BDW1T1G S-LBC846BDW1T3G S-LBC847BDW1T1G S-LBC847BDW1T3G S-LBC847CDW1T1G
LBC847CDW1T3G
S-LBC847CDW1T3G
LBC848BDW1T1G
S-LBC848BDW1T1G
LBC848BDW1T3G
S-LBC848BDW1T3G
LBC848CDW1T1G LBC848CDW1T3G
S-LBC848CDW1T1G S-LBC848CDW1T3G
Marking
1A 1A 1B 1B 1F 1F
1G 1G 1K
1K
1L 1L
Shipping 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel
3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel
Rev.O 1/6
LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Series
S-LBC846ADW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 10 mA)
LBC846 Series
LBC847 Series
V (BR)CEO
LBC848 Series
Collector–Emitter Breakdown Voltage
(I C = 10 µA, V EB = 0)
LBC846 Series
LBC847 Series
V (BR)CES
LBC848 Series
Collector–Base Breakdown Voltage
(I C = 10 µA)
LBC846 Series
LBC847 Series
V (BR)CBO
LBC848 Series
Emitter–Base Breakdown Voltage
(I E = 1.0 µA)
LBC846 Series
LBC847 Series
V (BR)EBO
LBC848 Series
Collector Cutoff Current
(V CB = 30 V) (V CB = 30 V, T A = 150°C)
I CBO
ON CHARACTERISTICS DC Current Gain
(I C = 2.0 mA, V CE = 5.0 V)
LBC846A LBC846B, LBC847B, LBC848B LBC847C, LBC848C
h FE
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Collector–Emitter Saturation Voltage ( I C = 100 mA, I B = 5.0 mA)
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V)
V CE(sat) V BE(sat) V BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
fT
(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = 10 V, f = 1.0 MHz)
C obo
Noise Figure (I C = 0.2 mA,
NF
V CE = 5.0 V dc, R S = 2.0 kΩ, LBC846A,LBC846B, LBC847B, LBC848B
f = 1.0 kHz, BW = 200 Hz) LBC847C, LBC848C
Min
65 45 30
80 50 30
80 50 30
6.0 6.0 5.0 — —
110 200 420
— — — — 580 —
100
—
— —
Typ Max
—— —— ——
—— —— ——
—— —— ——
—— —— —— — 15 — 5.0
180 220 290 450 520 800
— 0.25 — 0.6 0.7 — 0.9 — 660 700 — 770
——
— 4.5
— 10 — 4.0
Unit V
V
V
V
nA µA —
V V mV
MHz pF dB
Rev.O 2/6
h FE , NORMALIZED DC CURRENT GAIN
LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Series
S-LBC846ADW1T1G Series
TYPICAL CHARACTERISTICS
2.0 1.5 1.0 0.8 0.6
0.4 0.3
0.2 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200
I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain
V,VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0 0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I C , COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages
2.0
1.6
1.2
0.8
0.4
0
0.02
0.1
1.0
10 20
I B , BASE CURRENT (mA) Figure 3. Collector Saturation Region
θ vb, TEMPERATURE COEFFICIENT (mV/ ° C)
1.0 1.2 1.6 2.0 2.4 2.8
0.2 1.0 10 100
I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient
V CE, COLLECTOR-EMITTER VOLTAGE(V)
Rev.O 3/6
LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Series
S-LBC846ADW1T1G Series
C,CAPACITANCE(pF)
h FE , DC CURRENT GAIN (NORMALIZED)
TYPICAL CHARACTERISTICS
T f , CURREN-GAIN-BANDWIDTH PRODUCT (MHz)
10 400
300 7.0
200 5.0
100 3.0
80
60 2.0
40
30
1.0 0.4
0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
40
20 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
I C , COLLECTOR CURRENT (mAdc) Figure 6. Current–Gain – Bandwidth Product
50
1.0
2.0 1.0 0.5 0.2
0.1 0.2 2.0
1.0 10
.