LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
www.DataSheet4U.com
1 BASE
3 COLLECTOR
2 EMITTER
...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
PNP Silicon
www.DataSheet4U.com
1 BASE
3 COLLECTOR
2 EMITTER
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
T stg
–50 V
–60 V
–6.0 V
–150
mAdc
0.2 W
150 °C
-55 ~+150 °C
DEVICE MARKING
L2SA1037AKQLT1 =FQ L2SA1037AKSLT1 =G3F L2SA1037AKRLT1 =FR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage (IC = –1 mA) Emitter–Base Breakdown Voltage (IE = – 50 µA) Collector–Base Breakdown Voltage (IC = – 50 µA) Collector Cutoff Current (VCB = – 60 V) Emitter cutoff current (VEB = – 6 V) Collector-emitter saturation voltage (IC/ IB = – 50 mA / – 5m A) DC current transfer ratio (V CE = – 6 V, I C= –1mA) Transition frequency (V CE = – 12 V, I E= 2mA, f=30MHz ) Output capacitance (V CB = – 12 V, I E= 0A, f =1MHz )
Symbol V (BR)CEO V (BR)EBO V (BR)CBO
I CBO I EBO V CE(sat) h FE
fT C ob
Min – 50 –6 – 60 — — — 120
— —
h FE values are classified as follows:
*Q
R
hFE
120~270
180~390
S 270~560
L2SA1037AK*LT1
3
1 2
SOT– 23
Typ Max Unit — —V — —V — —V — – 0.1 µA — – 0.1 µA — -0.5 V –– 560 –– 140 –– MHz 4.0 5.0 pF
LM35–1/3
LESHAN RADIO COMPANY, LTD.
Fig.1 Grounded emitter propagation characteristics
I C, COLLECTOR CURRENT (mA)
–50
–20 –10 –50
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