LESHAN RADIO COMPANY, LTD.
General Purpose Transistors NPN Silicon
FEATURE
ƽHigh current capacity in compact package. ...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package. IC = 0.8A.
ƽEpitaxial planar type. ƽ
PNP complement: L8550 ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8050PLT1
80P
3000/Tape&Reel
L8050PLT1G
80P (Pb-Free)
3000/Tape&Reel
L8050QLT1
1YC
3000/Tape&Reel
L8050QLT1G
1YC (Pb-Free)
3000/Tape&Reel
MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-continuoun
Symbol
VCEO VCBO VEBO
IC
Max
25 40 5 800
Unit
V V V mAdc
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C
Thermal Resistance,Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C
Symbol PD
R θJ A PD
Max
Unit
225 mW 1.8 mW/°C 556 °C/W
300 mW 2.4 mW/°C
Thermal Resistance,Junction to Ambient Junction and Storage Temperature
R θJ A Tj,T Stg
417 -55 to +150
°C/W °C
L8050*LT1
3
1 2
SOT–23
COLLECTOR 3
1 BASE
2 EMITTER
L8050*LT1–1/3
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Typ
Collector-Emitter Breakdown Voltage (IC=1.0mA) Emitter-Base Breakdown Voltage (IE=100µΑ) Collector-Base Breakdown Voltage (IC=100µΑ) Collector Cutoff Current (VCB=35V) Emitter Cutoff Current (VEB=4V)
V(BR)CEO
V(BR)EBO
V(BR)CBO ICBO IEBO
25
5
40 – –
–
–
– – –...