L2SA1036KRLT1G

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series FFeatures S-L2SA1036KQLT1G Series 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3 3) We declare that the material of product compliance with RoHS requirements. 4) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 FStructure Epitaxial planar type PNP silicon transistor SOT– 23 3 FDEVICE MARKING 1) L2SA1036KQLT1G=HQ S- L2SA1036KQLT1G=HQ 2) L2SA1036KRLT1G=HR S-L2SA1036KRLT1G=HR 1 2 PNP FAbsolute maximum ratings (Ta = 25_C) FORDERING INFORMATION Device L2SA1036K*LT1G L2SA1036K*LT3G Package SOT-23 SOT-23 Shipping 3000/Tape & Reel 10000/Tape & Reel Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L 2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FElectrical characteristics (Ta = 25_C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emitter cutoff current IEBO Collector-emitter saturation voltage VCE(sat) DC current transfer ration hFE Transition frequence fT Output capacitance Cob Min. — 40 — 32 —5 — — — 120 — — Typ. — — — — — — — 200 7 Max. — — — —1 —1 — 0.4 390 — — Unit V V V µA µA V — MHZ pF Conditions IC= — 100µA Ic= — 1mA IE= — 100µA VCB= — 20v VEB= — 4V IC/IB= — 100mA/ — 10mA VCE= — 3V,Ic= — 10mA...