LESHAN RADIO COMPANY, LTD.
Medium Power Transistor NPN silicon
FEATURE
ƽEpitaxial planar type ƽComplementary to L2SA10...
LESHAN RADIO COMPANY, LTD.
Medium Power
Transistor NPN silicon
FEATURE
ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Free package is available
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SC2411KPLT1
CP
3000/Tape&Reel
L2SC2411KPLT1G (Pb-Free)
CP
3000/Tape&Reel
L2SC2411KQLT1
CQ
3000/Tape&Reel
L2SC2411KQLT1G (Pb-Free)
CQ
3000/Tape&Reel
L2SC2411KRLT1
CR
3000/Tape&Reel
L2SC2411KRLT1G (Pb-Free)
CR
3000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C) Parameter
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits 40 32 5 0.5 0.2 150
-55~+150
*PC must not be exceeded.
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol
Min.
Typ
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltgae Collector cutoff current Emitter cutoff current DC current transfer ratio Collcetor-emitter saturation voltage Transition frequency Output capacitance
hFE values are classified as follows:
Item P Q R
hFE
82~180 120~270 180~390
BVCBO BVCEO BVEBO
ICBO IEBO hFE VCE(sat) fT Cob
40 32 5 82 -
250 6.0
Unit V V V A* W °C °C
Max.
1 1 390 0.4 -
Unit
V V V µA µA V MHz pF
L2SC2411K*LT1
3 1
2
SOT– 23 (TO–236AB)
1 BASE
3 COLLECTOR
2 EMITTER
Conditions
IC=100µA IC=1mA IE=100µA VCB=20V VEB=4V VCE=3V IC/IB=500mA/50mA VCE=5V,IE=-20mA,f=100MHz VCB=10...