isc Silicon PNP Power Transistor
INCHANGE Semiconductor
BD934/936/938/940/942
DESCRIPTION ·DC Current Gain-
: hFE= 40(...
isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
BD934/936/938/940/942
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -150mA ·Complement to Type BD933/935/937/939/941 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BD934
-45
BD936
-60
VCBO
Collector-Base Voltage BD938
-100
V
BD940
-120
BD942
-140
BD934
-45
BD936
-60
VCEO
Collector-Emitter Voltage BD938
-80
V
BD940
-100
BD942
-120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-7
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.5
A
30
W
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150
℃
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
4.17 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W
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INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
BD934/936/938/940/942
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD934
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD936 BD938 IC= -30mA ; IB= 0 BD940
BD942
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
...