BD936

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD934/936/938/940/942 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -150mA ·Complement to Type BD933/935/937/939/941 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD934 -45 BD936 -60 VCBO Collector-Base Voltage BD938 -100 V BD940 -120 BD942 -140 BD934 -45 BD936 -60 VCEO Collector-Emitter Voltage BD938 -80 V BD940 -100 BD942 -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 30 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD934/936/938/940/942 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD934 VCEO(SUS) Collector-Emitter Sustaining Voltage BD936 BD938 IC= -30mA ; IB= 0 BD940 BD942 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A ...