C4589

www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4589 DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV display horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC IC(surge) IB PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector surge current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 800 5 10 20 0.6 50 150 -55~150 UNIT V V V A A A W www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4589 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE=: V(BR )EBO Emitter-base breakdown voltage IE=10mA; IC=0 VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6 A VBEsat Base-emitter saturation voltage ICES Collector cut-off current IEBO Emitter cut-off current hFE DC current gain IC=8A; IB=1.6 A VCE=1500V;RBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V tf Fall time ICP=7A; IB1=1.4A MIN TYP. MAX UNIT 800 V 5V 5.0 V 1.5 V 500 µA 100 µA 8 38 0.2 0.5 µs 2 www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power T...