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FDD14AN06LA0 Dataheets PDF



Part Number FDD14AN06LA0
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Datasheet FDD14AN06LA0 DatasheetFDD14AN06LA0 Datasheet (PDF)

FDD14AN06LA0 January 2004 FDD14AN06LA0 N-Channel PowerTrench® MOSFET 60V, 50A, 14.6mΩ Features • rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A • Qg(tot) = 25nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83557 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures a.

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FDD14AN06LA0 January 2004 FDD14AN06LA0 N-Channel PowerTrench® MOSFET 60V, 50A, 14.6mΩ Features • rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A • Qg(tot) = 25nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83557 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN (FLANGE) D GATE SOURCE G TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 100oC, VGS = 10V) Continuous (TC < 80oC, VGS = 5V) Continuous (Tamb = 25oC, VGS = 5V, with RθJA = 52oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature S Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 60 ±20 50 50 9.5 Figure 4 55 125 0.83 -55 to 175 1.2 100 52 Units V V A A A A mJ W W/oC oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2004 Fairchild Semiconductor Corporation FDD14AN06LA0 Rev. C FDD14AN06LA0 Package Marking and Ordering Information Device Marking FDD14AN06LA0 Device FDD14AN06LA0 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS(TH) Gate to Source Threshold Voltage rDS(ON) Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 50A, VGS = 10V ID = 50A, VGS = 5V ID = 50A, VGS = 5V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 5V VGS = 0V to 1V VDD = 30V ID = 50A Ig = 1.0mA Switching Characteristics (VGS = 5V) tON td(ON) Turn-On Time Turn-On Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time tOFF Turn-Off Time VDD = 30V, ID = 50A VGS = 5V, RGS = 5.1Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr QRR Reverse Recovery Time Reverse Recovered Charge Notes: 1: Starting TJ = 25°C, L = 70uH, IAS = 40A. ISD = 50A ISD = 25A ISD = 50A, dISD/dt = 100A/µs ISD = 50A, dISD/dt = 100A/µs Min Typ Max Units 60 - - V - -1 µA - - 250 - - ±100 nA 1 - 3V - 0.0102 0.0116 - 0.0128 0.0146 Ω - 0.028 0.033 - 2810 - pF - 270 - pF - 115 - pF 25 32 nC - 2.7 3.5 nC - 9.7 - nC - 7.0 - nC - 8.7 - nC - - 218 ns - 14 - ns - 132 - ns - 27 - ns - 47 - ns - - 111 ns - - 1.25 V - - 1.0 V - - 30 ns - - 24 nC ©2004 Fairchild Semiconductor Corporation FDD14AN06LA0 Rev. C FDD14AN06LA0 Typical Characteristics TC = 25°C unless otherwise noted ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 80 1.0 CURRENT LIMITED BY PACKAGE 60 0.8 VGS = 10V 0.6 40 0.4 VGS = 5V 20 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) Figure 1. Normalized Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature ZθJC, NORMALIZED THERMAL IMPEDANCE 2 DUTY CYCLE - DESCENDING ORDER 1 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.01 10-5 SINGLE PULSE 10-4 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-3 10-2 10-1 t , RECTANGULAR PULSE DURATION (s) 100 Figure 3. Normalized Maximum Transient Thermal Impedance 101 1000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION VGS = 10V VGS = 5V 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 IDM, PEAK CURRENT (A) 40 10-5 10-4 10-3 10-2 10-1 100 101 t , PULSE WIDTH (s) Figure 4. Peak Current Capability ©2004 Fairchild Semiconductor Corporation FDD14AN06LA0 Rev. C FDD14AN06LA0 Typical Characteristics TC = 25°C unless otherwise noted ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 1000.


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