LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽHigh current capacity in compact package. ƽ...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
PNP Silicon
FEATURE
ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽ
PNP complement: L8550H ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8550HPLT1G
s-L8550HPLT1G
1HB
3000/Tape&Reel
L8550HPLT3G L8550HQLT1G
s-L8550HPLT3G s-L8550HQLT1G
1HB 1HD
10000/Tape&Reel 3000/Tape&Reel
L8550HQLT3G L8550HRLT1G
s-L8550HQLT3G s-L8550HRLT1G
1HD 1HF
10000/Tape&Reel 3000/Tape&Reel
L8550HRLT3G L8550HSLT1G
s-L8550HRLT3G s-L8550HSLT1G
1HF 1HH
10000/Tape&Reel 3000/Tape&Reel
L8550HSLT3G
s-L8550HSLT3G 1HH
10000/Tape&Reel
L8550HPLT1G Series
S-L8550HPLT1G Series
3
1 2
SOT–23
COLLECTOR 3
1 BASE
2 EMITTER
MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO
IC
Max -25 -40 -5 -1500
Unit V V V
mAdc
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C
Thermal Resistance,Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C
Symbol PD
R θJ A PD
Max
Unit
225 mW 1.8 mW/°C 556 °C/W
300 mW 2.4 mW/°C
Thermal Resistance,Junction to Ambient Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in. ...