L8550HPLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP complement: L8550H ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8550HPLT1G s-L8550HPLT1G 1HB 3000/Tape&Reel L8550HPLT3G L8550HQLT1G s-L8550HPLT3G s-L8550HQLT1G 1HB 1HD 10000/Tape&Reel 3000/Tape&Reel L8550HQLT3G L8550HRLT1G s-L8550HQLT3G s-L8550HRLT1G 1HD 1HF 10000/Tape&Reel 3000/Tape&Reel L8550HRLT3G L8550HSLT1G s-L8550HRLT3G s-L8550HSLT1G 1HF 1HH 10000/Tape&Reel 3000/Tape&Reel L8550HSLT3G s-L8550HSLT3G 1HH 10000/Tape&Reel L8550HPLT1G Series S-L8550HPLT1G Series 3 1 2 SOT–23 COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Max -25 -40 -5 -1500 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C Thermal Resistance,Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C Symbol PD R θJ A PD Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance,Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. ...