LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier Transistor
z Features 1.High transition frequency.(Typ.fT=3.2GHz) ...
LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z Features 1.High transition frequency.(Typ.fT=3.2GHz) 2.Small rbb`Cc and high gain.(Typ.4ps)
3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 4.S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
VCBO
20
Collector-Emitter Voltage
VCEO
11
Emitter-base voltage
VEBO
3
Collector Current
IC 50
Collector power dissipation
PC 0.2
Junction temperature
Tj 150
Storage temperature
Tstg -55~+150
Unit V V V mA W °C °C
DEVICE MARKING L2SC3838QLT1G;S-L2SC3838QLT1G=APQ
L2SC3838QLT1G S-L2SC3838QLT1G
3
1 2
SOT-23
COLLECTOR 3
1 BASE
2 EMITTER
z ORDERING INFORMATION
Device
L2SC3838QLT1G S-L2SC3838QLT1G L2SC3838QLT3G S-L2SC3838QLT3G
Package SOT-23 SOT-23
Shipping 3000/Tape & Reel 10000/Tape & Reel
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE fT Cob
20 11 3 120 1.4 -
Collector-base time constant
rbb`Cc
-
Noise factor
NF -
Typ Max. Unit Conditions
- - V IC=10µA - - V I...