N-Channel MOSFET
FDPF770N15A — N-Channel PowerTrench® MOSFET
March 2015
FDPF770N15A
N-Channel PowerTrench® MOSFET
150 V, 10 A, 77 mΩ
F...
Description
FDPF770N15A — N-Channel PowerTrench® MOSFET
March 2015
FDPF770N15A
N-Channel PowerTrench® MOSFET
150 V, 10 A, 77 mΩ
Features
RDS(on) = 60 mΩ (Typ.) @ VGS = 10 V, ID = 10 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low
RDS(on) High Power and Current Handling Capability RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
Consumer Appliances LED TV Synchronous Rectification for ATX / Sever / Telecom PSU Uninterruptible Power Supply Micro Solar Inverter
D
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS
VGSS
ID
IDM EAS dv/dt
PD
TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Drain Current
- DC
- AC
(f > 1 Hz)
- Continuous (TC = 25oC,Silicon Limited) - Continuous (TC = 100oC,Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
FDPF770N15A 150 ±20 ±30 10 7 40 35 6.0 21 0.17
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