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FDD26AN06A0_F085

Fairchild Semiconductor

N-Channel PowerTrench MOSFET

FDD26AN06A0_F085 N" -Channel PowerTrench® MOSFET FDD26AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 36A, 26mΩ Features...


Fairchild Semiconductor

FDD26AN06A0_F085

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Description
FDD26AN06A0_F085 N" -Channel PowerTrench® MOSFET FDD26AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 36A, 26mΩ Features rDS(ON) = 20mΩ (Typ.), VGS = 10V, ID = 36A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Aug 2011 Applications Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems DRAIN (FLANGE) D GATE SOURCE G TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, RθJA = 52oC/W) Pulsed Single Pulse Avalanche Energy ( Note 1) Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature S Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 60 ±20 36 25 7 Figure 4 35 75 0.5 -55 to 175 2.0 100 52 Units V V A A A A mJ W W/oC oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q...




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