Productnnu 0 to 0.1
1.1–+00..12lifecycleaen 1.1–+00..13
Composite Transistors
XN06542 (XN6542)
Silicon NPN epitaxial p...
Productnnu 0 to 0.1
1.1–+00..12lifecycleaen 1.1–+00..13
Composite
Transistors
XN06542 (XN6542)
Silicon
NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing (Tr1) For medium-frequency amplification (Tr2)
■ Features Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half
■ Basic Part Number 2SC1215 + 2SD1360
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Tr1 Collector-base voltage (Emitter open)
VCBO
30
Collector-emitter voltage (Base open)
VCEO
20
Emitter-base voltage (Collector open)
VEBO
3
Collector current
Tr2 Collector-base voltage (Emitter open)
IC VCBO
50 45
Collector-emitter voltage (Base open)
VCEO
35
Emitter-base voltage (Collector open)
VEBO
4
Overall
Collector current Total power dissipation Junction temperature Storage temperature
IC 50 PT 300 Tj 150 Tstg −55 to +150
Unit V
V
V
mA V
V
V
mA mW °C °C
(0.65)dc
stage.
1.50–+00..0255e/ 2.8–+00..32 5˚ 0.4±0.2
2.90+–00..0250 1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150 0.50+–00..0150 10˚
1
Unit: mm
0.16+–00..0160
1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74
4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 5Z
Internal Connection 45
6
Tr2 Tr1 321
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