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B3965D Dataheets PDF



Part Number B3965D
Manufacturers BiTEK
Logo BiTEK
Description N- and P-Channel 40-V (D-S) MOSFET
Datasheet B3965D DatasheetB3965D Datasheet (PDF)

B3965D N- and P-Channel 40-V (D-S) MOSFET General Description The B3965D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits with high-side switching, and low in-line.

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B3965D N- and P-Channel 40-V (D-S) MOSFET General Description The B3965D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits with high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Pin Configuration Features 40V/5.2A, RDS(ON)=40mΩ@VGS=10V (N-Ch) 40V/4.9A, RDS(ON)=45mΩ@VGS=4.5V (N-Ch) -40V/-4.5A, RDS(ON)=54mΩ@VGS=-10V (P-Ch) -40V/-3.9A, RDS(ON)=72mΩ@VGS=-4.5V (P-Ch) Super High Density Cell Design For Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current Capability TO-252 Package Applications Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch LCD Display inverter ℃Absolute Maximum Ratings (TA=25 Unless Otherwise Noted): Parameter Drain-Source Voltage Gate-Source Voltage ℃Continuous Drain Current(tJ=150 ) ℃TA=25 ℃TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Energy with Single Pulse(L=0.1mH) ℃TA=25 Maximum Power Dissipation ℃TA=70 Operating Junction Temperature Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM IS EAS PD TJ RθJA RθJC N-Channel P-Channel 30 -30 ±20 ±20 6.9 -6.1 5.5 -4.9 30 -30 1.7 -1.7 10 20 2.0 1.3 -55 to 150 Steady 75 Steady 65 10sec 47 10sec 35 44 30 Unit V V A A A mJ W ℃ ℃/W ℃/W Confidential material for authorized user only and BiTEK reserves the utmost right upon the information contained herein. 5 www.BiTEK.com.tw .


B4953 B3965D B6020S


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