L2SB1197KRLT3G

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K 1 ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 SOT– 23 (TO–236AB) DEVICE MARKING AND ORDERING INFORMATION Device L2SB1197KQLT1G S-L2SB1197KQLT1G L2SB1197KQLT3G S-L2SB1197KQLT3G L2SB1197KRLT1G S-L2SB1197KRLT1G L2SB1197KRLT3G S-L2SB1197KRLT3G MAXIMUM RATINGS(Ta=25qC) Marking AHQ AHQ AHR AHR Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −40 −32 −5 −0.8 0.2 150 −55 to 150 Unit V V V A W °C °C ELECTRICAL CHARACTERISTICS(Ta=25qC) Parameter Symbol Min. Collector-base breakdown voltage BVCBO −40 Collector-emitter breakdown voltage BVCEO −32 Emitter-base breakdown voltage BVEBO −5 Collector cutoff current ICBO − Emitter cutoff current IEBO − Collector-emitter saturation voltage VCE(sat) − DC current transfer ratio hFE 120 Transition frequency fT − Output capacitance Cob − Typ. Max. Unit −−V −−V −−V − −0.5 µA − −0.5 µA...