LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L2SA812QLT1G Series
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpit...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
L2SA812QLT1G Series
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type.
S-L2SA812QLT1G Series
ƽ
NPN complement: L2SC1623 ƽWe declare that the material of product compliance with RoHS requirements.
3
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
DEVICE MARKING AND ORDERING INFORMATION
2
Device
Marking
L2SA812QLT1G S-L2SA812QLT1G
M8
L2SA812QLT3G S-L2SA812QLT3G
L2SA812RLT1G S-L2SA812RLT1G
L2SA812RLT3G S-L2SA812RLT3G
L2SA812SLT1G S-L2SA812SLT1G
L2SA812SLT3G S-L2SA812SLT3G
M8 M6
M6 M7 M7
MAXIMUM RATINGS
Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel
SOT-23
1 BASE
3 COLLECTOR
2 EMITTER
Rating Collector-Emitter Voltage
Symbol VCEO
L2SA812 -50
Unit V
Collector-Base Voltage Emitter-Base Voltage
VCBO -60 V VEBO -6 V
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
-150
mAdc
Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R θJA PD
R θJA Tj ,Tstg
Max
200 1.8 556
200 2.4 417 -55 to +150
Unit
mW mW/oC oC/W
mW mW/oC oC/W
oC
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series S-L2SA812QLT1G Series
ELECT...