LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽN...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽ
NPN complement: L2SC1623 ƽPb-Free Package is available.
www.DataSheet4U.DcoEmVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SA812QLT1
M8
3000/Tape&Reel
L2SA812QLT1G L2SA812RLT1
M8 (Pb-Free)
M6
3000/Tape&Reel 3000/Tape&Reel
L2SA812RLT1G L2SA812SLT1
M6 (Pb-Free)
M7
3000/Tape&Reel 3000/Tape&Reel
L2SA812SLT1G
M7 (Pb-Free)
MAXIMUM RATINGS
3000/Tape&Reel
Rating
Symbol
L2SA812
Unit
Collector-Emitter Voltage
VCEO -50 V
Collector-Base Voltage
VCBO -60 V
Emitter-Base Voltage
VEBO -6 V
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
-150
mAdc
Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC
Thermal Resistance, Junction to Ambient
Symbol PD
R θJA
Max
200 1.8 556
Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
PD
R θJA Tj ,Tstg
200 2.4 417 -55 to +150
L2SA812*LT1
3 1
2 SOT-23
1 BASE
3 COLLECTOR
2 EMITTER
Unit
mW mW/oC oC/W
mW mW/oC oC/W
oC
L2SA812-1/5
LESHAN RADIO COMPANY, LTD.
L2SA812*LT1
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown Voltage www.DataSheet4U.com (IE=-50 µΑ ) Collector-Base Breakdown Voltage (IC=-50 µA) Collector Cutof...