FDD850N10LD

FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) November 2013 FDD850N10LD BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 15.3 A, 75 mΩ Features RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A Low Gate Charge (Typ. 22.2 nC) Low Crss (Typ. 42 pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. Applications LED Monitor Backlight LED TV Backlight LED Lighting Consumer Appliances, DC-DC converter (Step up & Step down) 3 12 45 3 TO252-5L 1. Gate 2. Source 3. Drain / Anode 4. Cathode 5. Cathode 1 Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD IF(AV) IFSM TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25oC) - Derate Above 25oC Diode Average Rectified Forward Current (TC = 138oC) Diode Non-repetitive Peak Surge Current 60 Hz Single Half-Sine Wave Operating and Storage Temperature R...